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Технічний опис P6SMB36CA-AU-R2 Panjit
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 30.8V, Breakdown voltage: 34.2...37.8V, Max. forward impulse current: 12A, Semiconductor structure: bidirectional, Case: SMB, Mounting: SMD, Leakage current: 1µA, Kind of package: reel; tape, Manufacturer series: P6SMB, Features of semiconductor devices: glass passivated, Application: automotive industry.
Інші пропозиції P6SMB36CA-AU-R2
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
|
P6SMB36CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2...37.8V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMB Features of semiconductor devices: glass passivated Application: automotive industry |
товару немає в наявності |
В кошику од. на суму грн. |
| P6SMB36CA-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Application: automotive industry
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMB
Features of semiconductor devices: glass passivated
Application: automotive industry
товару немає в наявності
В кошику
од. на суму грн.


