Технічний опис P6SMBJ8.0A_R2_00001 Panjit
Category: Unidirectional TVS SMD diodes, Description: Diode: TVS; 0.6kW; 8.89÷9.83V; 44.1A; unidirectional; SMB; P6SMBJ, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 8V, Breakdown voltage: 8.89...9.83V, Max. forward impulse current: 44.1A, Semiconductor structure: unidirectional, Case: SMB, Mounting: SMD, Leakage current: 50µA, Kind of package: reel; tape, Features of semiconductor devices: glass passivated, Manufacturer series: P6SMBJ.
Інші пропозиції P6SMBJ8.0A_R2_00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| P6SMBJ8.0A_R2_00001 | Виробник : PanJit Semiconductor |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.6kW; 8.89÷9.83V; 44.1A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 8V Breakdown voltage: 8.89...9.83V Max. forward impulse current: 44.1A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 50µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
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