P6SMBJ9.0CA-AU_R1_006A1 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 9V
Breakdown voltage: 10...11.1V
Max. forward impulse current: 39A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Application: automotive industry
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Технічний опис P6SMBJ9.0CA-AU_R1_006A1 PanJit Semiconductor
Category: Bidirectional TVS SMD diodes, Description: Diode: TVS; 0.6kW; 10÷11.1V; 39A; bidirectional; SMB; reel,tape, Type of diode: TVS, Peak pulse power dissipation: 0.6kW, Max. off-state voltage: 9V, Breakdown voltage: 10...11.1V, Max. forward impulse current: 39A, Semiconductor structure: bidirectional, Case: SMB, Mounting: SMD, Leakage current: 5µA, Kind of package: reel; tape, Features of semiconductor devices: glass passivated, Manufacturer series: P6SMBJ, Application: automotive industry.

