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P80FG6EA-5071 SHINDENGEN

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Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 80A; Idm: 320A; 128W
Type of transistor: N-MOSFET
Technology: EETMOS2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 128W
Case: FG (TO263AB)
Gate-source voltage: ±20V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement

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Технічний опис P80FG6EA-5071 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS2; unipolar; 60V; 80A; Idm: 320A; 128W, Type of transistor: N-MOSFET, Technology: EETMOS2, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 80A, Pulsed drain current: 320A, Power dissipation: 128W, Case: FG (TO263AB), Gate-source voltage: ±20V, On-state resistance: 4.9mΩ, Mounting: SMD, Gate charge: 90nC, Kind of package: reel; tape, Kind of channel: enhancement.