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P8B10SBK-5071 SHINDENGEN

Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W
Pulsed drain current: 24A
Power dissipation: 23W
Gate charge: 16.5nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: FB (TO252AA)
On-state resistance: 94mΩ
Mounting: SMD

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Технічний опис P8B10SBK-5071 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W, Pulsed drain current: 24A, Power dissipation: 23W, Gate charge: 16.5nC, Polarisation: unipolar, Drain current: 8A, Kind of channel: enhancement, Drain-source voltage: 100V, Type of transistor: N-MOSFET, Gate-source voltage: ±10V, Kind of package: reel; tape, Case: FB (TO252AA), On-state resistance: 94mΩ, Mounting: SMD.