P8B10SBK-5071 SHINDENGEN
Виробник: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W
Case: FB (TO252AA)
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 16.5nC
On-state resistance: 94mΩ
Power dissipation: 23W
Drain current: 8A
Gate-source voltage: ±10V
Pulsed drain current: 24A
Drain-source voltage: 100V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W
Case: FB (TO252AA)
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Gate charge: 16.5nC
On-state resistance: 94mΩ
Power dissipation: 23W
Drain current: 8A
Gate-source voltage: ±10V
Pulsed drain current: 24A
Drain-source voltage: 100V
Polarisation: unipolar
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Технічний опис P8B10SBK-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 24A; 23W, Case: FB (TO252AA), Kind of package: reel; tape, Kind of channel: enhancement, Mounting: SMD, Type of transistor: N-MOSFET, Gate charge: 16.5nC, On-state resistance: 94mΩ, Power dissipation: 23W, Drain current: 8A, Gate-source voltage: ±10V, Pulsed drain current: 24A, Drain-source voltage: 100V, Polarisation: unipolar.