PBLS1501V115

PBLS1501V115 Nexperia USA Inc.


NEXP-S-A0002880985-1.pdf?t.download=true&u=5oefqw Виробник: Nexperia USA Inc.
Description: PBLS1501V - 15 V PNP BISS LOADSW
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Power - Max: 300mW
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 15V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA, 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 150 @ 100mA, 2V
Frequency - Transition: 280MHz
Resistor - Base (R1): 2.2kOhms
Resistor - Emitter Base (R2): 2.2kOhms
Supplier Device Package: SOT-666
на замовлення 36000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
4012+4.79 грн
Мінімальне замовлення: 4012
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Технічний опис PBLS1501V115 Nexperia USA Inc.

Description: PBLS1501V - 15 V PNP BISS LOADSW, Packaging: Bulk, Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN Pre-Biased, 1 PNP, Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 15V, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA, 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V / 150 @ 100mA, 2V, Frequency - Transition: 280MHz, Resistor - Base (R1): 2.2kOhms, Resistor - Emitter Base (R2): 2.2kOhms, Supplier Device Package: SOT-666.