PBLS1502V,115 NXP Semiconductors
Виробник: NXP SemiconductorsTrans Digital BJT NPN/PNP 50V 100mA/500mA 300mW Automotive 6-Pin SOT-666 T/R
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Технічний опис PBLS1502V,115 NXP Semiconductors
Description: TRANS NPN PREBIAS/PNP SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: 1 NPN Pre-Biased, 1 PNP, Power - Max: 300mW, Current - Collector (Ic) (Max): 100mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 15V, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 1µA, 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 100mA, 2V, Frequency - Transition: 280MHz, Resistor - Base (R1): 4.7kOhms, Resistor - Emitter Base (R2): 4.7kOhms, Supplier Device Package: SOT-666.
Інші пропозиції PBLS1502V,115
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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PBLS1502V,115 | Виробник : NXP USA Inc. |
Description: TRANS NPN PREBIAS/PNP SOT666 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN Pre-Biased, 1 PNP Power - Max: 300mW Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 15V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA, 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 150 @ 100mA, 2V Frequency - Transition: 280MHz Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 4.7kOhms Supplier Device Package: SOT-666 |
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