PBLS1503V,115-NXP NXP USA Inc.
Виробник: NXP USA Inc.
Description: 0.1A 50V 2-ELEMENT NPN AND PNP
Part Status: Active
Supplier Device Package: SOT-666
Resistor - Emitter Base (R2): 10kOhms
Resistor - Base (R1): 10kOhms
Frequency - Transition: 280MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 200 @ 10mA, 2V
Current - Collector Cutoff (Max): 1µA, 100nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 15V
Current - Collector (Ic) (Max): 100mA, 500mA
Power - Max: 300mW
Transistor Type: 1 NPN Pre-Biased, 1 PNP
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 3806+ | 5.78 грн |
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Технічний опис PBLS1503V,115-NXP NXP USA Inc.
Description: 0.1A 50V 2-ELEMENT NPN AND PNP, Part Status: Active, Supplier Device Package: SOT-666, Resistor - Emitter Base (R2): 10kOhms, Resistor - Base (R1): 10kOhms, Frequency - Transition: 280MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V / 200 @ 10mA, 2V, Current - Collector Cutoff (Max): 1µA, 100nA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA, Voltage - Collector Emitter Breakdown (Max): 50V, 15V, Current - Collector (Ic) (Max): 100mA, 500mA, Power - Max: 300mW, Transistor Type: 1 NPN Pre-Biased, 1 PNP, Mounting Type: Surface Mount, Package / Case: SOT-563, SOT-666, Packaging: Bulk.

