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PBRN113ZS,126

PBRN113ZS,126 NXP USA Inc.

PBRN113Z_SER.pdf
Виробник: NXP USA Inc.
Description: TRANS PREBIAS NPN 40V TO92-3
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 1 kOhms
Power - Max: 700 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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Технічний опис PBRN113ZS,126 NXP USA Inc.

Description: TRANS PREBIAS NPN 40V TO92-3, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 1 kOhms, Power - Max: 700 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 800 mA, Supplier Device Package: TO-92-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 500 @ 300mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 1.15V @ 8mA, 800mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB).