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PBSS4160K,115

PBSS4160K,115 NXP USA Inc.

PBSS4160K.pdf
Виробник: NXP USA Inc.
Description: TRANS NPN 60V 0.75A SMT3
Power - Max: 425 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 750 mA
Supplier Device Package: SMT3; MPAK
Frequency - Transition: 220MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Технічний опис PBSS4160K,115 NXP USA Inc.

Description: TRANS NPN 60V 0.75A SMT3, Power - Max: 425 mW, Voltage - Collector Emitter Breakdown (Max): 60 V, Current - Collector (Ic) (Max): 750 mA, Supplier Device Package: SMT3; MPAK, Frequency - Transition: 220MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 280mV @ 100mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).