PBSS5130QA,147 NXP USA Inc.
Виробник: NXP USA Inc.
Description: PBSS5130QA - 30 V, 1 A PNP LOW V
Qualification: AEC-Q101
Power - Max: 325 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Grade: Automotive
Supplier Device Package: DFN1010D-3
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
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Технічний опис PBSS5130QA,147 NXP USA Inc.
Description: PBSS5130QA - 30 V, 1 A PNP LOW V, Qualification: AEC-Q101, Power - Max: 325 mW, Voltage - Collector Emitter Breakdown (Max): 30 V, Current - Collector (Ic) (Max): 1 A, Grade: Automotive, Supplier Device Package: DFN1010D-3, Frequency - Transition: 170MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 240mV @ 100mA, 1A, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad, Packaging: Bulk.