Технічний опис PBSS5140V,115 NXP Semiconductors
Description: TRANS PNP 40V 1A SOT666, Packaging: Tape & Reel (TR), Package / Case: SOT-563, SOT-666, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 310mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V, Frequency - Transition: 150MHz, Supplier Device Package: SOT-666, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 40 V, Power - Max: 500 mW.
Інші пропозиції PBSS5140V,115
| Фото | Назва | Виробник | Інформація |
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PBSS5140V,115 | Виробник : NXP USA Inc. |
 Description: TRANS PNP 40V 1A SOT666Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 310mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-666 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW |
товару немає в наявності |
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PBSS5140V,115 | Виробник : NXP USA Inc. |
Description: TRANS PNP 40V 1A SOT666 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 310mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V Frequency - Transition: 150MHz Supplier Device Package: SOT-666 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 500 mW |
товару немає в наявності |