Продукція > NXP USA INC. > PBSS5160PAPS115
PBSS5160PAPS115

PBSS5160PAPS115 NXP USA Inc.

PBSS5160PAPS.pdf
Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: DFN2020D-6
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 100mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 50mA, 1A
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 1A
Power - Max: 370mW
Operating Temperature: 150°C (TJ)
Transistor Type: 2 PNP
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Bulk
товару немає в наявності
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис PBSS5160PAPS115 NXP USA Inc.

Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: DFN2020D-6, Frequency - Transition: 125MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 170 @ 100mA, 2V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 550mV @ 50mA, 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Current - Collector (Ic) (Max): 1A, Power - Max: 370mW, Operating Temperature: 150°C (TJ), Transistor Type: 2 PNP, Mounting Type: Surface Mount, Package / Case: 6-UDFN Exposed Pad, Packaging: Bulk.