PBSS5240X115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Power - Max: 500 mW
Vce Saturation (Max) @ Ib, Ic: 630mV @ 200mA, 2A
Operating Temperature: 150°C (TJ)
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: SOT-89
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-243AA
Frequency - Transition: 150MHz
Part Status: Active
| Кількість | Ціна |
|---|---|
| 5236+ | 4.33 грн |
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Технічний опис PBSS5240X115 NXP USA Inc.
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V, Current - Collector Cutoff (Max): 100nA (ICBO), Power - Max: 500 mW, Vce Saturation (Max) @ Ib, Ic: 630mV @ 200mA, 2A, Operating Temperature: 150°C (TJ), Packaging: Bulk, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 2 A, Supplier Device Package: SOT-89, Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: TO-243AA, Frequency - Transition: 150MHz, Part Status: Active.