PCDP1265GC_T0_00601 Panjit International Inc.
Виробник: Panjit International Inc.
Description: 650V SIC SCHOTTKY BARRIER DIODE
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
Voltage - DC Reverse (Vr) (Max): 650 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-220AC
Current - Average Rectified (Io): 12A
Capacitance @ Vr, F: 372pF @ 1V, 1MHz
Technology: SiC (Silicon Carbide) Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 1+ | 457.98 грн |
| 10+ | 370.06 грн |
| 100+ | 299.42 грн |
| 500+ | 249.78 грн |
| 1000+ | 213.87 грн |
| 2000+ | 201.38 грн |
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Технічний опис PCDP1265GC_T0_00601 Panjit International Inc.
Description: 650V SIC SCHOTTKY BARRIER DIODE, Current - Reverse Leakage @ Vr: 100 µA @ 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A, Voltage - DC Reverse (Vr) (Max): 650 V, Operating Temperature - Junction: -55°C ~ 175°C, Supplier Device Package: TO-220AC, Current - Average Rectified (Io): 12A, Capacitance @ Vr, F: 372pF @ 1V, 1MHz, Technology: SiC (Silicon Carbide) Schottky, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: TO-220-2, Packaging: Tube.