PCDP1265GC_T0_00601 Panjit International Inc.
Виробник: Panjit International Inc.Description: 650V SIC SCHOTTKY BARRIER DIODE
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 372pF @ 1V, 1MHz
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1+ | 479.17 грн |
| 10+ | 387.19 грн |
| 100+ | 313.28 грн |
| 500+ | 261.33 грн |
| 1000+ | 223.77 грн |
| 2000+ | 210.70 грн |
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Технічний опис PCDP1265GC_T0_00601 Panjit International Inc.
Description: 650V SIC SCHOTTKY BARRIER DIODE, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 372pF @ 1V, 1MHz, Current - Average Rectified (Io): 12A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 12 A, Current - Reverse Leakage @ Vr: 100 µA @ 650 V.