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PCGA160T65NF8 onsemi

PCGA160T65NF8-D.pdf Виробник: onsemi
Description: IGBT TRENCH FS 650V 160A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A
Supplier Device Package: Wafer
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 53ns/98ns
Test Condition: 400V, 160A, 5Ohm, 15V
Gate Charge: 167 nC
Grade: Automotive
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 480 A
Qualification: AEC-Q101
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Технічний опис PCGA160T65NF8 onsemi

Description: IGBT TRENCH FS 650V 160A WAFER, Packaging: Bulk, Package / Case: Die, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 160A, Supplier Device Package: Wafer, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: 53ns/98ns, Test Condition: 400V, 160A, 5Ohm, 15V, Gate Charge: 167 nC, Grade: Automotive, Current - Collector (Ic) (Max): 160 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 480 A, Qualification: AEC-Q101.