PDTA143ZK,115 NXP USA Inc.
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SMT3
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Resistors Included: R1 and R2
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 4.7 kOhms
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SMT3; MPAK
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Технічний опис PDTA143ZK,115 NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.1A SMT3, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Resistors Included: R1 and R2, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 4.7 kOhms, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: SMT3; MPAK.