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PDTB123ES,126

PDTB123ES,126 NXP USA Inc.

PDTB123E.pdf
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V TO92-3
Resistor - Base (R1): 2.2 kOhms
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Resistor - Emitter Base (R2): 2.2 kOhms
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Технічний опис PDTB123ES,126 NXP USA Inc.

Description: TRANS PREBIAS PNP 50V TO92-3, Resistor - Base (R1): 2.2 kOhms, Power - Max: 500 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Supplier Device Package: TO-92-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Through Hole, Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Packaging: Tape & Box (TB), Resistor - Emitter Base (R2): 2.2 kOhms.