PDTB143EQA147 NXP USA Inc.
Виробник: NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.5A 3DFN
Resistor - Emitter Base (R2): 4.7 kOhms
Resistor - Base (R1): 4.7 kOhms
Frequency - Transition: 150 MHz
Power - Max: 325 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Active
Supplier Device Package: DFN1010D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: 3-XDFN Exposed Pad
Packaging: Bulk
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Технічний опис PDTB143EQA147 NXP USA Inc.
Description: TRANS PREBIAS PNP 50V 0.5A 3DFN, Resistor - Emitter Base (R2): 4.7 kOhms, Resistor - Base (R1): 4.7 kOhms, Frequency - Transition: 150 MHz, Power - Max: 325 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 500 mA, Part Status: Active, Supplier Device Package: DFN1010D-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: 3-XDFN Exposed Pad, Packaging: Bulk.