PDTC114YM315 NXP USA Inc.
Виробник: NXP USA Inc.
Description: NOW NEXPERIA PDTC114YM - SMALL S
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Bulk
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 230 MHz
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: DFN1006-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Resistor - Emitter Base (R2): 47 kOhms
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Технічний опис PDTC114YM315 NXP USA Inc.
Description: NOW NEXPERIA PDTC114YM - SMALL S, Current - Collector Cutoff (Max): 1µA, Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Bulk, Resistor - Base (R1): 10 kOhms, Frequency - Transition: 230 MHz, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: DFN1006-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V, Resistor - Emitter Base (R2): 47 kOhms.

