PDTC115EEF,115 NXP USA Inc.
Виробник: NXP USA Inc.Description: TRANS PREBIAS NPN 50V SC89
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Supplier Device Package: SC-89
Current - Collector (Ic) (Max): 20 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Resistor - Base (R1): 100 kOhms
Resistor - Emitter Base (R2): 100 kOhms
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Технічний опис PDTC115EEF,115 NXP USA Inc.
Description: TRANS PREBIAS NPN 50V SC89, Packaging: Tape & Reel (TR), Package / Case: SC-89, SOT-490, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V, Supplier Device Package: SC-89, Current - Collector (Ic) (Max): 20 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Resistor - Base (R1): 100 kOhms, Resistor - Emitter Base (R2): 100 kOhms.
Інші пропозиції PDTC115EEF,115
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PDTC115EEF,115 | Виробник : NXP USA Inc. |
Description: TRANS PREBIAS NPN 50V SC89 Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Supplier Device Package: SC-89 Current - Collector (Ic) (Max): 20 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Resistor - Base (R1): 100 kOhms Resistor - Emitter Base (R2): 100 kOhms |
товару немає в наявності |