PDTC123YQBZ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: PDTC123YQB/SOT8015/DFN1110D-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 2.2 kOhms
Frequency - Transition: 230 MHz
Power - Max: 340 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: DFN1110D-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис PDTC123YQBZ Nexperia USA Inc.
Description: PDTC123YQB/SOT8015/DFN1110D-3, Resistors Included: R1 and R2, Resistor - Emitter Base (R2): 10 kOhms, Resistor - Base (R1): 2.2 kOhms, Frequency - Transition: 230 MHz, Power - Max: 340 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Supplier Device Package: DFN1110D-3, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 5V, Current - Collector Cutoff (Max): 100nA, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Transistor Type: NPN - Pre-Biased, Mounting Type: Surface Mount, Wettable Flank, Package / Case: 3-XDFN Exposed Pad, Packaging: Tape & Reel (TR).
Інші пропозиції PDTC123YQBZ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
PDTC123YQBZ | Nexperia |
Digital Transistors NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ |
товару немає в наявності |
В кошику од. на суму грн. |
| PDTC123YQBZ |
|
Виробник: Nexperia
Digital Transistors NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
Digital Transistors NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ
товару немає в наявності
В кошику
од. на суму грн.