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PE3324C2A_R1_00501 PanJit Semiconductor

Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Type of diode: TVS
Capacitance: 30pF
Leakage current: 1µA
Max. forward impulse current: 1A
Number of channels: 2
Max. off-state voltage: 24V
Breakdown voltage: 29.5V
Peak pulse power dissipation: 0.35kW

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Технічний опис PE3324C2A_R1_00501 PanJit Semiconductor

Category: Protection diodes - arrays, Description: Diode: TVS; 29.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2, Semiconductor structure: unidirectional, Mounting: SMD, Case: SOT23, Type of diode: TVS, Capacitance: 30pF, Leakage current: 1µA, Max. forward impulse current: 1A, Number of channels: 2, Max. off-state voltage: 24V, Breakdown voltage: 29.5V, Peak pulse power dissipation: 0.35kW.