PE4105C2A_R1_00501 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.35kW
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.35kW
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Технічний опис PE4105C2A_R1_00501 PanJit Semiconductor
Category: Protection diodes - arrays, Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2, Mounting: SMD, Case: SOT23, Type of diode: TVS, Semiconductor structure: unidirectional, Capacitance: 0.12nF, Leakage current: 1µA, Number of channels: 2, Max. forward impulse current: 1A, Max. off-state voltage: 5V, Breakdown voltage: 7.5V, Peak pulse power dissipation: 0.35kW.