Продукція > PANJIT SEMICONDUCTOR > PE4724L1Q_R1_00201

PE4724L1Q_R1_00201 PanJit Semiconductor

Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A

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Технічний опис PE4724L1Q_R1_00201 PanJit Semiconductor

Category: Protection diodes - arrays, Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1, Case: DFN1610-2, Mounting: SMD, Type of diode: TVS, Semiconductor structure: unidirectional, Capacitance: 0.28nF, Leakage current: 1µA, Number of channels: 1, Max. off-state voltage: 24V, Breakdown voltage: 26.4V, Max. forward impulse current: 32A.