PEC1605M1Q-AU_R1_005A1 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Capacitance: 0.6pF
Mounting: SMD
Type of diode: TVS
Leakage current: 75nA
Number of channels: 1
Max. forward impulse current: 2A
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Application: automotive industry
Semiconductor structure: bidirectional
Case: DFN1006-2
Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Capacitance: 0.6pF
Mounting: SMD
Type of diode: TVS
Leakage current: 75nA
Number of channels: 1
Max. forward impulse current: 2A
Max. off-state voltage: 5V
Breakdown voltage: 6.8V
Application: automotive industry
Semiconductor structure: bidirectional
Case: DFN1006-2
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Технічний опис PEC1605M1Q-AU_R1_005A1 PanJit Semiconductor
Category: Protection diodes - arrays, Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1, Capacitance: 0.6pF, Mounting: SMD, Type of diode: TVS, Leakage current: 75nA, Number of channels: 1, Max. forward impulse current: 2A, Max. off-state voltage: 5V, Breakdown voltage: 6.8V, Application: automotive industry, Semiconductor structure: bidirectional, Case: DFN1006-2.