Технічний опис PH6030L,115 NXP Semiconductors
Description: MOSFET N-CH 30V 76.7A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 76.7A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V, Power Dissipation (Max): 62.5W (Tc), Vgs(th) (Max) @ Id: 2.15V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 12 V.
Інші пропозиції PH6030L,115
| Фото | Назва | Виробник | Інформація |
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PH6030L,115 | Виробник : NXP USA Inc. |
 Description: MOSFET N-CH 30V 76.7A LFPAK56Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76.7A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V Power Dissipation (Max): 62.5W (Tc) Vgs(th) (Max) @ Id: 2.15V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 12 V |
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