PHK24NQ04LT,518 NXP Semiconductors

Description: MOSFET N-CH 40V 21.2A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21.2A (Tc), Rds On (Max) @ Id, Vgs: 7.7mOhm @ 14A, 10V, Power Dissipation (Max): 6.25W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: 8-SO, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2985 pF @ 25 V.