Технічний опис PHN210,118 NXP Semiconductors
Description: MOSFET 2N-CH 30V 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -65°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 30V, Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V, Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: 8-SO.
Інші пропозиції PHN210,118
| Фото | Назва | Виробник | Інформація |
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PHN210,118 | Виробник : NXP USA Inc. |
 Description: MOSFET 2N-CH 30V 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: 8-SO |
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