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PHN210,118

PHN210,118 NXP USA Inc.

PHN210.pdf
Виробник: NXP USA Inc.
Description: MOSFET 2N-CH 30V 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 2.8V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V
Drain to Source Voltage (Vdss): 30V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
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Технічний опис PHN210,118 NXP USA Inc.

Description: MOSFET 2N-CH 30V 8SO, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 2.8V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 20V, Drain to Source Voltage (Vdss): 30V, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount.