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PHPT61002NYC115

PHPT61002NYC115 NXP USA Inc.

PHPT61002NYC.pdf
Виробник: NXP USA Inc.
Description: POWER BIPOLAR TRANSISTOR, LFPAK
Part Status: Active
Packaging: Bulk
Power - Max: 1.25 W
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: LFPAK56, Power-SO8
Frequency - Transition: 140MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 75mV @ 50mA, 500mA
Operating Temperature: 175°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
на замовлення 427000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2074+10.13 грн
Мінімальне замовлення: 2074
В кошику  од. на суму  грн.
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Технічний опис PHPT61002NYC115 NXP USA Inc.

Description: POWER BIPOLAR TRANSISTOR, LFPAK, Part Status: Active, Packaging: Bulk, Power - Max: 1.25 W, Voltage - Collector Emitter Breakdown (Max): 100 V, Current - Collector (Ic) (Max): 2 A, Supplier Device Package: LFPAK56, Power-SO8, Frequency - Transition: 140MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V, Current - Collector Cutoff (Max): 100nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 75mV @ 50mA, 500mA, Operating Temperature: 175°C (TJ), Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669.