PHPT61002NYC115 NXP USA Inc.
Виробник: NXP USA Inc.Description: POWER BIPOLAR TRANSISTOR, LFPAK
Packaging: Bulk
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 75mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V
Frequency - Transition: 140MHz
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.25 W
на замовлення 427000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2074+ | 10.33 грн |
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Технічний опис PHPT61002NYC115 NXP USA Inc.
Description: POWER BIPOLAR TRANSISTOR, LFPAK, Packaging: Bulk, Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 175°C (TJ), Vce Saturation (Max) @ Ib, Ic: 75mV @ 50mA, 500mA, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 500mA, 10V, Frequency - Transition: 140MHz, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.25 W.