Продукція > NXP USA INC. > PHT2NQ10T,135

PHT2NQ10T,135 NXP USA Inc.

Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 2.5A SOT223
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SC-73
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 6.25W (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 1.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)

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Технічний опис PHT2NQ10T,135 NXP USA Inc.

Description: MOSFET N-CH 100V 2.5A SOT223, Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: SC-73, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 6.25W (Tc), Rds On (Max) @ Id, Vgs: 430mOhm @ 1.75A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -65°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-261-4, TO-261AA, Packaging: Tape & Reel (TR).