PHU101NQ03LT,127 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 30V 75A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 166W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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Технічний опис PHU101NQ03LT,127 NXP USA Inc.
Description: MOSFET N-CH 30V 75A IPAK, Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Part Status: Obsolete, Supplier Device Package: IPAK, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 166W (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Tube.