PJA3415AE_R1_00501 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W
Mounting: SMD
Pulsed drain current: -17.2A
Case: SOT23
Drain-source voltage: -20V
Drain current: -4.3A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 24nC
Kind of channel: enhancement
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W
Mounting: SMD
Pulsed drain current: -17.2A
Case: SOT23
Drain-source voltage: -20V
Drain current: -4.3A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Kind of package: reel; tape
Version: ESD
Gate charge: 24nC
Kind of channel: enhancement
Gate-source voltage: ±8V
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис PJA3415AE_R1_00501 PanJit Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W, Mounting: SMD, Pulsed drain current: -17.2A, Case: SOT23, Drain-source voltage: -20V, Drain current: -4.3A, On-state resistance: 50mΩ, Type of transistor: P-MOSFET, Power dissipation: 1.25W, Polarisation: unipolar, Kind of package: reel; tape, Version: ESD, Gate charge: 24nC, Kind of channel: enhancement, Gate-source voltage: ±8V, кількість в упаковці: 1 шт.
Інші пропозиції PJA3415AE_R1_00501
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| PJA3415AE-R1-00501 | Виробник : Panjit |
 TO-220AB-L/MOS/NFE |
товару немає в наявності |
||
| PJA3415AE_R1_00501 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W Mounting: SMD Pulsed drain current: -17.2A Case: SOT23 Drain-source voltage: -20V Drain current: -4.3A On-state resistance: 50mΩ Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Kind of package: reel; tape Version: ESD Gate charge: 24nC Kind of channel: enhancement Gate-source voltage: ±8V |
товару немає в наявності |