PJA3415AE_R1_00501 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Pulsed drain current: -17.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.3A
Pulsed drain current: -17.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис PJA3415AE_R1_00501 PanJit Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -20V, Drain current: -4.3A, Pulsed drain current: -17.2A, Power dissipation: 1.25W, Case: SOT23, Gate-source voltage: ±8V, On-state resistance: 50mΩ, Mounting: SMD, Gate charge: 24nC, Kind of package: reel; tape, Kind of channel: enhancement, Version: ESD, кількість в упаковці: 1 шт.
Інші пропозиції PJA3415AE_R1_00501
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| PJA3415AE-R1-00501 | Виробник : Panjit |
 TO-220AB-L/MOS/NFE |
товару немає в наявності |
||
| PJA3415AE_R1_00501 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.3A; Idm: -17.2A; 1.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.3A Pulsed drain current: -17.2A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 50mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
товару немає в наявності |