PJA3441_R1_00501 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -12.4A
Gate charge: 6nC
Kind of package: reel; tape
| Кількість | Ціна без ПДВ |
|---|---|
| 17+ | 28.26 грн |
| 25+ | 17.52 грн |
| 100+ | 13.37 грн |
| 250+ | 9.31 грн |
| 500+ | 8.72 грн |
| 1000+ | 8.04 грн |
| 3000+ | 7.28 грн |
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Технічний опис PJA3441_R1_00501 PanJit Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -40V, Drain current: -3.1A, Power dissipation: 1.25W, Case: SOT23, Gate-source voltage: ±20V, On-state resistance: 108mΩ, Mounting: SMD, Kind of channel: enhancement, Pulsed drain current: -12.4A, Gate charge: 6nC, Kind of package: reel; tape.