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Технічний опис PJEC2415VM1WS-R1 Panjit
Category: Protection diodes - arrays, Description: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1, Mounting: SMD, Peak pulse power dissipation: 0.16kW, Max. off-state voltage: 24V, Semiconductor structure: bidirectional, Leakage current: 50nA, Case: SOD323, Type of diode: TVS, Number of channels: 1, Breakdown voltage: 30.3V, Max. forward impulse current: 3A.
Інші пропозиції PJEC2415VM1WS-R1
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
PJEC2415VM1WS_R1_00001 | PanJit Semiconductor |
 Category: Protection diodes - arraysDescription: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1 Mounting: SMD Peak pulse power dissipation: 0.16kW Max. off-state voltage: 24V Semiconductor structure: bidirectional Leakage current: 50nA Case: SOD323 Type of diode: TVS Number of channels: 1 Breakdown voltage: 30.3V Max. forward impulse current: 3A |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| PJEC2415VM1WS_R1_00001 |
|
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.16kW
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOD323
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 30.3V
Max. forward impulse current: 3A
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.16kW
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOD323
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 30.3V
Max. forward impulse current: 3A
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.