PJMB390N65EC_T0_00601 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 22A
Power dissipation: 87.5W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhancement
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Технічний опис PJMB390N65EC_T0_00601 PanJit Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 22A; 87.5W; TO263, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 10A, Pulsed drain current: 22A, Power dissipation: 87.5W, Case: TO263, Gate-source voltage: ±30V, On-state resistance: 390mΩ, Mounting: SMD, Gate charge: 19nC, Kind of package: tube, Kind of channel: enhancement.