PJMF130N65EC_T0_006A1 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; Idm: 63A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 63A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29A; Idm: 63A; 14W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 63A
Power dissipation: 14W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
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Технічний опис PJMF130N65EC_T0_006A1 PanJit Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 29A; Idm: 63A; 14W; ITO220AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 29A, Pulsed drain current: 63A, Power dissipation: 14W, Case: ITO220AB, Gate-source voltage: ±30V, On-state resistance: 0.13Ω, Mounting: THT, Gate charge: 51nC, Kind of package: tube, Kind of channel: enhancement.