PJMH040N60EC_T0_00201 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
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Технічний опис PJMH040N60EC_T0_00201 PanJit Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 71A, Pulsed drain current: 212A, Power dissipation: 200W, Case: TO247AD-3, Gate-source voltage: ±30V, On-state resistance: 40mΩ, Mounting: THT, Gate charge: 144nC, Kind of package: tube, Kind of channel: enhancement.