PJQ1908-AU_R1_002A1 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
кількість в упаковці: 1 шт
товару немає в наявності
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Технічний опис PJQ1908-AU_R1_002A1 PanJit Semiconductor
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 50V, Drain current: 0.5A, Pulsed drain current: 1.2A, Power dissipation: 0.9W, Case: DFN1006-3, Gate-source voltage: ±20V, On-state resistance: 1.45Ω, Mounting: SMD, Gate charge: 0.95nC, Kind of package: reel; tape, Kind of channel: enhancement, Application: automotive industry, кількість в упаковці: 1 шт.
Інші пропозиції PJQ1908-AU_R1_002A1
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| PJQ1908-AU-R1-002A1 | Виробник : Panjit | Array |
товару немає в наявності |
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| PJQ1908-AU_R1_002A1 | Виробник : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.5A Pulsed drain current: 1.2A Power dissipation: 0.9W Case: DFN1006-3 Gate-source voltage: ±20V On-state resistance: 1.45Ω Mounting: SMD Gate charge: 0.95nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |