PJQ4437EP_R2_00201 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W
Case: DFN3333-8
Drain-source voltage: -30V
Drain current: -38A
On-state resistance: 15.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 13.5W
Polarisation: unipolar
Kind of package: reel
Gate charge: 32nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -123A
Mounting: SMD
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W
Case: DFN3333-8
Drain-source voltage: -30V
Drain current: -38A
On-state resistance: 15.4mΩ
Type of transistor: P-MOSFET
Power dissipation: 13.5W
Polarisation: unipolar
Kind of package: reel
Gate charge: 32nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -123A
Mounting: SMD
кількість в упаковці: 1 шт
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис PJQ4437EP_R2_00201 PanJit Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W, Case: DFN3333-8, Drain-source voltage: -30V, Drain current: -38A, On-state resistance: 15.4mΩ, Type of transistor: P-MOSFET, Power dissipation: 13.5W, Polarisation: unipolar, Kind of package: reel, Gate charge: 32nC, Kind of channel: enhancement, Gate-source voltage: ±25V, Pulsed drain current: -123A, Mounting: SMD, кількість в упаковці: 1 шт.
Інші пропозиції PJQ4437EP_R2_00201
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| PJQ4437EP_R2_00201 | Виробник : PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W Case: DFN3333-8 Drain-source voltage: -30V Drain current: -38A On-state resistance: 15.4mΩ Type of transistor: P-MOSFET Power dissipation: 13.5W Polarisation: unipolar Kind of package: reel Gate charge: 32nC Kind of channel: enhancement Gate-source voltage: ±25V Pulsed drain current: -123A Mounting: SMD |
товару немає в наявності |