Продукція > PANJIT SEMICONDUCTOR > PJQ4437EP_R2_00201

PJQ4437EP_R2_00201 PanJit Semiconductor

Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W
Polarisation: unipolar
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel
Pulsed drain current: -123A
Drain current: -38A
Drain-source voltage: -30V
Gate charge: 32nC
On-state resistance: 15.4mΩ
Power dissipation: 13.5W
Gate-source voltage: ±25V

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Технічний опис PJQ4437EP_R2_00201 PanJit Semiconductor

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -30V; -38A; Idm: -123A; 13.5W, Polarisation: unipolar, Case: DFN3333-8, Kind of channel: enhancement, Mounting: SMD, Type of transistor: P-MOSFET, Kind of package: reel, Pulsed drain current: -123A, Drain current: -38A, Drain-source voltage: -30V, Gate charge: 32nC, On-state resistance: 15.4mΩ, Power dissipation: 13.5W, Gate-source voltage: ±25V.