PJQ5850_R2_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: MOSFET 2N-CH 40V 5A 8DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: DFN5060B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 14A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.7W (Ta), 12W (Tc)
Technology: MOSFET (Metal Oxide)
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Технічний опис PJQ5850_R2_00001 Panjit International Inc.
Description: MOSFET 2N-CH 40V 5A 8DFN, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Supplier Device Package: DFN5060B-8, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 14A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 1.7W (Ta), 12W (Tc), Technology: MOSFET (Metal Oxide).