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Технічний опис PJSD05CTM-R1-00001 Panjit
Category: Protection diodes - arrays, Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1, Type of diode: TVS, Peak pulse power dissipation: 0.1kW, Max. off-state voltage: 5V, Max. forward impulse current: 1A, Semiconductor structure: bidirectional, Case: SOD923, Mounting: SMD, Leakage current: 1µA, Capacitance: 30pF, Number of channels: 1, Breakdown voltage: 5.78V.
Інші пропозиції PJSD05CTM-R1-00001
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
PJSD05CTM_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.1kW Max. off-state voltage: 5V Max. forward impulse current: 1A Semiconductor structure: bidirectional Case: SOD923 Mounting: SMD Leakage current: 1µA Capacitance: 30pF Number of channels: 1 Breakdown voltage: 5.78V |
товару немає в наявності |
Мінімальне замовлення: 8000 шт В кошику од. на суму грн. |
| PJSD05CTM_R1_00001 |
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.1kW
Max. off-state voltage: 5V
Max. forward impulse current: 1A
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Capacitance: 30pF
Number of channels: 1
Breakdown voltage: 5.78V
Category: Protection diodes - arrays
Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.1kW
Max. off-state voltage: 5V
Max. forward impulse current: 1A
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Capacitance: 30pF
Number of channels: 1
Breakdown voltage: 5.78V
товару немає в наявності
Мінімальне замовлення: 8000 шт
В кошику
од. на суму грн.