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Технічний опис PJSD05CTM-R1-00001 Panjit
Category: Protection diodes - arrays, Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1, Semiconductor structure: bidirectional, Case: SOD923, Mounting: SMD, Type of diode: TVS, Capacitance: 30pF, Leakage current: 1µA, Number of channels: 1, Max. forward impulse current: 1A, Max. off-state voltage: 5V, Breakdown voltage: 5.78V, Peak pulse power dissipation: 0.1kW.
Інші пропозиції PJSD05CTM-R1-00001
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| PJSD05CTM_R1_00001 | Виробник : PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1 Semiconductor structure: bidirectional Case: SOD923 Mounting: SMD Type of diode: TVS Capacitance: 30pF Leakage current: 1µA Number of channels: 1 Max. forward impulse current: 1A Max. off-state voltage: 5V Breakdown voltage: 5.78V Peak pulse power dissipation: 0.1kW |
товару немає в наявності |