PJSOT24C-05-AU_R1_000A1 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.15nF
Application: automotive industry
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Технічний опис PJSOT24C-05-AU_R1_000A1 PanJit Semiconductor
Category: Protection diodes - arrays, Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2, Type of diode: TVS, Breakdown voltage: 29.4V, Max. forward impulse current: 12A, Peak pulse power dissipation: 0.35kW, Semiconductor structure: unidirectional, Mounting: SMD, Case: SOT23, Max. off-state voltage: 24V, Leakage current: 1µA, Number of channels: 2, Capacitance: 0.15nF, Application: automotive industry.