PJSOT36_R1_00501 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 9A; 0.5kW; unidirectional; SOT23; Ch: 1
Mounting: SMD
Number of channels: 1
Max. forward impulse current: 9A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Case: SOT23
Type of diode: TVS
Capacitance: 80pF
Leakage current: 1µA
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Технічний опис PJSOT36_R1_00501 PanJit Semiconductor
Category: Protection diodes - arrays, Description: Diode: TVS; 40V; 9A; 0.5kW; unidirectional; SOT23; Ch: 1, Mounting: SMD, Number of channels: 1, Max. forward impulse current: 9A, Max. off-state voltage: 36V, Breakdown voltage: 40V, Peak pulse power dissipation: 0.5kW, Semiconductor structure: unidirectional, Case: SOT23, Type of diode: TVS, Capacitance: 80pF, Leakage current: 1µA.