PJW4P06A_R2_00701 PanJit Semiconductor
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -16A
Gate charge: 10nC
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 50.14 грн |
| 14+ | 31.83 грн |
| 100+ | 21.16 грн |
| 500+ | 16.51 грн |
| 1000+ | 14.90 грн |
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Технічний опис PJW4P06A_R2_00701 PanJit Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223, Type of transistor: P-MOSFET, Polarisation: unipolar, Drain-source voltage: -60V, Drain current: -4A, Power dissipation: 3.1W, Case: SOT223, Gate-source voltage: ±20V, On-state resistance: 0.13Ω, Mounting: SMD, Kind of channel: enhancement, Kind of package: reel; tape, Pulsed drain current: -16A, Gate charge: 10nC.