PMBT3906MB315 NXP USA Inc.
Виробник: NXP USA Inc.
Description: NOW NEXPERIA PMBT3906MB SMALL SI
Power - Max: 250 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Active
Supplier Device Package: DFN1006B-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Bulk
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Технічний опис PMBT3906MB315 NXP USA Inc.
Description: NOW NEXPERIA PMBT3906MB SMALL SI, Power - Max: 250 mW, Voltage - Collector Emitter Breakdown (Max): 40 V, Current - Collector (Ic) (Max): 200 mA, Part Status: Active, Supplier Device Package: DFN1006B-3, Frequency - Transition: 250MHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V, Current - Collector Cutoff (Max): 500nA (ICBO), Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA, Operating Temperature: 150°C (TJ), Transistor Type: PNP, Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Bulk.