Продукція > NXP USA INC. > PMEG050V150EPD139
PMEG050V150EPD139

PMEG050V150EPD139 NXP USA Inc.


PMEG050V150EPD.pdf
Виробник: NXP USA Inc.
Description: DIODE SCHOTTKY 50V 15A CFP15
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: 175°C
Supplier Device Package: CFP15
Current - Average Rectified (Io): 15A
Capacitance @ Vr, F: 1750pF @ 1V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 51 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Part Status: Active
Packaging: Bulk
товару немає в наявності

В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис PMEG050V150EPD139 NXP USA Inc.

Description: DIODE SCHOTTKY 50V 15A CFP15, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 1 mA @ 50 V, Voltage - Forward (Vf) (Max) @ If: 500 mV @ 15 A, Voltage - DC Reverse (Vr) (Max): 50 V, Grade: Automotive, Operating Temperature - Junction: 175°C, Supplier Device Package: CFP15, Current - Average Rectified (Io): 15A, Capacitance @ Vr, F: 1750pF @ 1V, 1MHz, Technology: Schottky, Reverse Recovery Time (trr): 51 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Part Status: Active, Packaging: Bulk.