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Технічний опис PMEG120G20ELR-QX Nexperia
Description: DIODE SIGE 120V 2A SOD123W, Qualification: AEC-Q101, Grade: Automotive, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: SOD-123W, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 30 nA @ 120 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 120 V, Part Status: Active, Operating Temperature - Junction: 175°C, Supplier Device Package: SOD-123W, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 75pF @ 1V, 1MHz, Technology: SiGe (Silicon Germanium), Reverse Recovery Time (trr): 11 ns.
Інші пропозиції PMEG120G20ELR-QX
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
PMEG120G20ELR-QX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 2A SOD123W Qualification: AEC-Q101 Grade: Automotive Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 30 nA @ 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 120 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: SOD-123W Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 75pF @ 1V, 1MHz Technology: SiGe (Silicon Germanium) Reverse Recovery Time (trr): 11 ns |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
|
|
PMEG120G20ELR-QX | Nexperia USA Inc. |
Description: DIODE SIGE 120V 2A SOD123W Qualification: AEC-Q101 Grade: Automotive Current - Average Rectified (Io): 2A Capacitance @ Vr, F: 75pF @ 1V, 1MHz Technology: SiGe (Silicon Germanium) Reverse Recovery Time (trr): 11 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SOD-123W Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 30 nA @ 120 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 120 V Part Status: Active Operating Temperature - Junction: 175°C Supplier Device Package: SOD-123W |
товару немає в наявності |
В кошику од. на суму грн. |
| PMEG120G20ELR-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 120V 2A SOD123W
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 11 ns
Description: DIODE SIGE 120V 2A SOD123W
Qualification: AEC-Q101
Grade: Automotive
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 11 ns
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| PMEG120G20ELR-QX |
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 120V 2A SOD123W
Qualification: AEC-Q101
Grade: Automotive
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 11 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
Description: DIODE SIGE 120V 2A SOD123W
Qualification: AEC-Q101
Grade: Automotive
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 11 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Active
Operating Temperature - Junction: 175°C
Supplier Device Package: SOD-123W
товару немає в наявності
В кошику
од. на суму грн.