Продукція > NEXPERIA USA INC. > PMEG120G20ELRZ
PMEG120G20ELRZ

PMEG120G20ELRZ Nexperia USA Inc.

Nexperia_Selection_guide_2020.pdf
Виробник: Nexperia USA Inc.
Description: DIODE SIGE 120V 2A CFP3
Supplier Device Package: CFP3
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Technology: SiGe (Silicon Germanium)
Reverse Recovery Time (trr): 6 ns
Speed: Fast Recovery =< 500ns, > 1A (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123W
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 120 V
Part Status: Obsolete
Operating Temperature - Junction: 175°C
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Мінімальне замовлення: 10000 шт
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Технічний опис PMEG120G20ELRZ Nexperia USA Inc.

Description: DIODE SIGE 120V 2A CFP3, Supplier Device Package: CFP3, Current - Average Rectified (Io): 2A, Capacitance @ Vr, F: 75pF @ 1V, 1MHz, Technology: SiGe (Silicon Germanium), Reverse Recovery Time (trr): 6 ns, Speed: Fast Recovery =< 500ns, > 1A (Io), Mounting Type: Surface Mount, Package / Case: SOD-123W, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 30 nA @ 120 V, Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A, Voltage - DC Reverse (Vr) (Max): 120 V, Part Status: Obsolete, Operating Temperature - Junction: 175°C.