PMEG200G10ELR-QX NEXPERIA

Description: DIODE SIGE 200V 1A SOD123W, Packaging: Tape & Reel (TR), Package / Case: SOD-123W, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 34 ns, Technology: SiGe (Silicon Germanium), Capacitance @ Vr, F: 29pF @ 1V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: SOD-123W, Operating Temperature - Junction: 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 880 mV @ 1 A, Current - Reverse Leakage @ Vr: 30 nA @ 200 V, Grade: Automotive, Qualification: AEC-Q101.